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PHPT60610NY Datasheet Preview

PHPT60610NY Datasheet

NPN Transistor

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PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
15 January 2019
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
PNP complement: PHPT60610PY
2. Features and benefits
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
ICM
RCEsat
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = 10 A; IB = 1 A; tp ≤ 300 µs; pulsed;
δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 10 A
- - 20 A
- 25 36 mΩ




nexperia

PHPT60610NY Datasheet Preview

PHPT60610NY Datasheet

NPN Transistor

No Preview Available !

Nexperia
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT60610NY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT60610NY
Marking code
0610NAB
PHPT60610NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2019
© Nexperia B.V. 2019. All rights reserved
2 / 13


Part Number PHPT60610NY
Description NPN Transistor
Maker nexperia
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