* High thermal power dissipation capability
* High temperature applications up to 175 °C
* Reduced Printed Circuit Board (PCB) requirements comparing to trans.

up to 175 °C
* Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
* High energy e.

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY 2. Features and benefits
* High thermal power dissipation capability
* High temperature applications up t.

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