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PHP45NQ10T Datasheet Preview

PHP45NQ10T Datasheet

N-channel MOSFET

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PHP45NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V
Ptot
total power
Tmb = 25 °C
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 45 A;
VDS = 80 V; Tj = 25 °C
Min Typ Max Unit
- - 100 V
- - 47 A
- - 150 W
- 22 25 m
- 25 - nC




nexperia

PHP45NQ10T Datasheet Preview

PHP45NQ10T Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PHP45NQ10T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PHP45NQ10T
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
PHP45NQ10T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 8 July 2010
© Nexperia B.V. 2017. All rights reserved
2 of 12


Part Number PHP45NQ10T
Description N-channel MOSFET
Maker nexperia
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