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PHP30NQ15T Datasheet

N-channel MOSFET

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PHP30NQ15T
N-channel TrenchMOS standard level FET
Rev. 03 — 3 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj 25 °C; Tj 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 2
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 3
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 30 A;
VDS = 120 V; Tj = 25 °C;
see Figure 13
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C;
see Figure 11 and 12
Min Typ Max Unit
-
-
150 V
-
-
29 A
-
-
150 W
-
20 27 nC
-
60 63 m




nexperia

PHP30NQ15T Datasheet Preview

PHP30NQ15T Datasheet

N-channel MOSFET

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Nexperia
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
PHP30NQ15T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHP30NQ15T
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
PHP30NQ15T_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
© Nexperia B.V. 2017. All rights reserved
2 of 13


Part Number PHP30NQ15T
Description N-channel MOSFET
Maker nexperia
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