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PHP29N08T Datasheet

N-channel MOSFET

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PHP29N08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ High noise immunity due to high gate
threshold voltage
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 11 V;
see Figure 1; see Figure 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 29 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 11 V; ID = 14 A;
Tj = 175 °C; see Figure 9;
see Figure 10
VGS = 11 V; ID = 14 A;
Tj = 25 °C; see Figure 9;
see Figure 10
Min Typ Max Unit
- - 75 V
- - 27 A
- - 88 W
- 9 - nC
- 96 120 m
- 40 50 m




nexperia

PHP29N08T Datasheet Preview

PHP29N08T Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base, connected to
drain
PHP29N08T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
PHP29N08T
TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
SC-46
TO-220AB
Version
SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 11 V; Tmb = 100 °C; see Figure 1
VGS = 11 V; Tmb = 25 °C; see Figure 1;
see Figure 3
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Min Max Unit
- 75 V
- 75 V
-30 30
V
- 19.2 A
- 27 A
- 108 A
- 88 W
-55 175 °C
-55 175 °C
- 27 A
- 108 A
PHP29N08T_2
Product data sheet
Rev. 02 — 12 March 2009
2 of 12
© Nexperia B.V. 2017. All rights reserved


Part Number PHP29N08T
Description N-channel MOSFET
Maker nexperia
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