Datasheet Summary
N-channel TrenchMOS standard level FET
Rev. 02
- 12 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- High noise immunity due to high gate threshold voltage
- Low conduction losses due to low on-state resistance
1.3 Applications
- Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
Tj ≥ 25...
