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PHP28NQ15T Datasheet

N-channel MOSFET

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PHP28NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 22 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Increased efficiency during switching
due to low body diode recovered
charge
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ Class-D audio amplifiers
„ DC-to-AC inverters
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tj = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 10 A;
VDS = 75 V; Tj = 25 °C;
see Figure 12 and 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 18 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
- - 150 V
- - 28.5 A
- - 150 W
- 7.5 - nC
- 54 65 m




nexperia

PHP28NQ15T Datasheet Preview

PHP28NQ15T Datasheet

N-channel MOSFET

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Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PHP28NQ15T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHP28NQ15T
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tj = 25 °C; see Figure 1 and 3
VGS = 10 V; Tj = 100 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 9.9 A; Vsup 150 V;
RGS = 50 ; tp = 0.1 ms; unclamped
Min Max Unit
- 150 V
- 150 V
-20 20
V
- 28.5 A
- 20.2 A
- 57.1 A
- 150 W
-55 175 °C
-55 175 °C
- 28.5 A
- 57.1 A
- 100 mJ
PHP28NQ15T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 22 March 2010
© Nexperia B.V. 2017. All rights reserved
2 of 13


Part Number PHP28NQ15T
Description N-channel MOSFET
Maker nexperia
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