PHP27NQ11T Datasheet | Nexperia

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Higher operating power due to low thermal resistance - Low conduction losses due to low on-state resistance 1.3 Applications - DC-to-DC convertors - Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 27 A; VDS = 80 V; Tj = 25 °C; see Figure 11 VGS = 10 V; ID = 14 A; Tj = 25 °C; see Figure 9 and 10 Min Typ Max Unit - - 110 V - - 27.6 A - - 107 W - 12 - n C - 40 50 mΩ Nexperia 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain N-channel Trench MOS standard level FET Simplified outline mb Graphic symbol G mbb076 S 3. Ordering information SOT78 (TO-220AB) Table 3. Ordering information Type...