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PHP27NQ11T Datasheet Preview

PHP27NQ11T Datasheet

N-channel MOSFET

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PHP27NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 4 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon drain-source on-state
resistance
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 27 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 14 A;
Tj = 25 °C; see Figure 9
and 10
Min Typ Max Unit
- - 110 V
- - 27.6 A
- - 107 W
- 12 - nC
- 40 50 m




nexperia

PHP27NQ11T Datasheet Preview

PHP27NQ11T Datasheet

N-channel MOSFET

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Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PHP27NQ11T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHP27NQ11T
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
VGS = 10 V; Tmb = 100 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 30 A; Vsup 100 V;
drain-source avalanche unclamped; tp = 0.05 ms; RGS = 50
energy
PHP27NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
Min Max Unit
- 110 V
- 110 V
-20 20
V
- 27.6 A
- 20 A
- 112 A
- 107 W
-55 175 °C
-55 175 °C
- 28 A
- 112 A
- 90 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 13


Part Number PHP27NQ11T
Description N-channel MOSFET
Maker nexperia
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