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PHB33NQ20T - N-channel MOSFET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Higher operating power due to low thermal resistance.
  • Low conduction losses due to low on-state resistance.
  • Simple gate drive required due to low gate charge.
  • Suitable for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low gate charge „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC primary side switching 1.4 Quick reference data Table 1.