PHB29N08T mosfet equivalent, n-channel mosfet.
* High noise immunity due to high gate threshold voltage
* Low conduction losses due to low on-state resistance
1.3 Applications
* Industrial motor control
.
only.
1.2 Features and benefits
* High noise immunity due to high gate threshold voltage
* Low conduction loss.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feat.
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