Datasheet4U Logo Datasheet4U.com

PH2925U - N-Channel MOSFET

General Description

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Higher operating power due to low thermal resistance.
  • Interfaces directly with low voltage gate drivers.
  • Low conduction losses due to low on-state resistance 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PH2925U N-channel TrenchMOS ultra low level FET NXP
PH2920 N-channel enhancement mode field-effect transistor NXP
PH2907 PNP switching transistor NXP
PH2907A PNP switching transistor NXP
PH2931-20M Radar Pulsed Power Transistor/ 20W/100ms Pulse/ 10% Duty 2.9-3.1 GHz Tyco Electronics

Other Datasheets by Nexperia

Part Number Description
PH2520U N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PH2925U N-channel TrenchMOS ultra low level FET Rev. 04 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Interfaces directly with low voltage gate drivers „ Low conduction losses due to low on-state resistance 1.3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.4 Quick reference data Table 1.