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nexperia

PBSS5540X Datasheet Preview

PBSS5540X Datasheet

PNP Transistor

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PBSS5540X
40 V, 5 A PNP low VCEsat (BISS) transistor
20 March 2018
Product data sheet
1. General description
PNP low VCEsat transistor in a medium power SOT89 (SC-62) package.
NPN complement: PBSS4540X.
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency leading to less heat generation.
AEC-Q101 qualified
3. Applications
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Medium power driver (e.g. relays, buzzers and motors).
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
hFE DC current gain
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
VCE = -2 V; IC = -0.5 A; Tamb = 25 °C
IC = -5 A; IB = -500 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -40 V
--
--
250 -
- 45
-4 A
-10 A
-
75 mΩ




nexperia

PBSS5540X Datasheet Preview

PBSS5540X Datasheet

PNP Transistor

No Preview Available !

Nexperia
PBSS5540X
40 V, 5 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 C collector
3 B base
Simplified outline
321
SOT89
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5540X
SOT89
Description
Version
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4. Marking codes
Type number
PBSS5540X
[1] % = placeholder for manufacturing site code
Marking code[1]
%1G
PBSS5540X
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2018
© Nexperia B.V. 2018. All rights reserved
2 / 16


Part Number PBSS5540X
Description PNP Transistor
Maker nexperia
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PBSS5540X Datasheet PDF






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