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PBSS5360X Datasheet Preview

PBSS5360X Datasheet

PNP transistor

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PBSS5360X
60 V, 3 A PNP low VCEsat (BISS) transistor
3 July 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)
flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4360X
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
DC-to-DC conversion
Supply line switches
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
ICM
RCEsat
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
[1]
Min Typ Max Unit
- - -60 V
- - -3 A
- - -6 A
- - 225 mΩ




nexperia

PBSS5360X Datasheet Preview

PBSS5360X Datasheet

PNP transistor

No Preview Available !

Nexperia
PBSS5360X
60 V, 3 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 C collector
3 B base
Simplified outline
321
SOT89
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5360X
SOT89
Description
plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5
mm x 2.5 mm x 1.5 mm body
Version
SOT89
7. Marking
Table 4. Marking codes
Type number
PBSS5360X
Marking code
S42
PBSS5360X
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 July 2017
© Nexperia B.V. 2017. All rights reserved
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Part Number PBSS5360X
Description PNP transistor
Maker nexperia
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