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PBSS5330PAS Datasheet, nexperia

PBSS5330PAS transistor equivalent, pnp transistor.

PBSS5330PAS Avg. rating / M : 1.0 rating-11

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PBSS5330PAS Datasheet

Features and benefits


* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.

Application

up to 175 °C
* Reduced Printed-Circuit Board (PCB) area requirements
* Leadless small SMD plastic package with s.

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN comp.

Image gallery

PBSS5330PAS Page 1 PBSS5330PAS Page 2 PBSS5330PAS Page 3

TAGS

PBSS5330PAS
PNP
transistor
PBSS5330PA
PBSS5330X
PBSS5320D
nexperia

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