PBSS5250TH datasheet, transistor equivalent, nexperia

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Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* High collector current gain (hFE) at high IC
* Higher .

Application

up to 175 °C
* AEC-Q101 qualified 3. Applications
* Power management
* DC-to-DC conversion
* Supply lin.

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
* Low collector-emitter saturation voltage VCEsat
* High collector current capab.

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