PBSS5250TH
PBSS5250TH is PNP transistor manufactured by Nexperia.
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (h FE) at high IC
- Higher efficiency leading to less heat genereation
- High temperature applications up to 175 °C
- AEC-Q101 qualified
3. Applications
- Power management
- DC-to-DC conversion
- Supply line switches
- Battery charger switches
- Peripheral drivers
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = -2 A; IB = -200 m A; Tamb = 25 °C
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
[1]
Min Typ Max Unit
- - -50 V
- - -2 A
- - -3 A
- - 150 mΩ
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 B base 2 E emitter 3 C collector
Simplified outline
TO-236AB...
