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PBSS5250TH Datasheet Preview

PBSS5250TH Datasheet

PNP transistor

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PBSS5250TH
50 V, 2 A PNP low VCEsat (BISS) transistor
9 August 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat genereation
High temperature applications up to 175 °C
AEC-Q101 qualified
3. Applications
Power management
DC-to-DC conversion
Supply line switches
Battery charger switches
Peripheral drivers
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
ICM
RCEsat
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
[1]
Min Typ Max Unit
- - -50 V
- - -2 A
- - -3 A
- - 150 mΩ




nexperia

PBSS5250TH Datasheet Preview

PBSS5250TH Datasheet

PNP transistor

No Preview Available !

Nexperia
PBSS5250TH
50 V, 2 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5250TH
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
PBSS5250TH
[1] % = placeholder for manufacturing site code
Marking code[1]
FH%
PBSS5250TH
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 August 2017
© Nexperia B.V. 2017. All rights reserved
2 / 14


Part Number PBSS5250TH
Description PNP transistor
Maker nexperia
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