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PBSS5250TH PNP transistor

PBSS5250TH Description

PBSS5250TH 50 V, 2 A PNP low VCEsat (BISS) transistor 9 August 2017 Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PBSS5250TH Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* High collector current gain (hFE) at high IC
* Higher efficiency leading to less heat genereation

PBSS5250TH Applications

* up to 175 °C
* AEC-Q101 qualified 3. Applications
* Power management
* DC-to-DC conversion
* Supply line switches
* Battery charger switches
* Peripheral drivers
* Driver in low supply voltage applications (e. g. lamps and LEDs)
* Induc

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