PBSS5130PAP
PBSS5130PAP is 1A PNP/PNP low VCEsat (BISS) transistor manufactured by Nexperia.
description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP plement: PBSS4130PANP. NPN/NPN plement: PBSS4130PAN.
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = -1 A; IB = -0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -1 A
- - -2 A
- - 250 mΩ
Nexperia
30 V, 1 A PNP/PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2
Simplified outline
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