PBSS5112PAP - 1A PNP/PNP low VCEsat (BISS) transistor

Nexperia

Datasheet Details

Part number	PBSS5112PAP
Manufacturer	Nexperia
File Size	740.15 KB
Description	1A PNP/PNP low VCEsat (BISS) transistor
Datasheet	PBSS5112PAP Datasheet

General Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4112PANP.

NPN/NPN complement: PBSS4112PAN.

Overview

PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1.

Product profile 1.

Key Features

Very low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain hFE at high IC.
Reduced Printed-Circuit Board (PCB) requirements.
High energy efficiency due to less heat generation.
AEC-Q101 qualified 1.3.

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