PBSS5112PAP datasheet, transistor equivalent, nexperia

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Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.

Application

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g..

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. 1.2 Features and benefi.

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