PBSS4360Z
PBSS4360Z is NPN transistor manufactured by Nexperia.
description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS5360Z.
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- DC-to-DC conversion
- Supply line switching
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; single pulse collector-emitter saturation resistance
IC = 2 A; IB = 200 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 3A
- - 6A
- - 140 mΩ
Nexperia
60 V, 3 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 B base 2 C collector 3 E emitter 4 C collector
Simplified outline
SC-73 (SOT223)
Graphic symbol
2, 4
3 sym016
6. Ordering...
