PBSS4360Z transistor equivalent, npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation
* AE.
* DC-to-DC conversion
* Supply line switching
* Battery charger
* LCD backlighting
* Driver in low s.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2. Features and benefits
* Low collector-emitter saturation voltage VCEsat
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