PBSS4360X transistor equivalent, npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation
* AE.
* DC-to-DC conversion
* Supply line switching
* Battery charger
* LCD backlighting
* Driver in low s.
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360X
2. Features and benefits
* Low collector-emitter saturation voltage VCE.
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