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PBSS4360X Datasheet Preview

PBSS4360X Datasheet

NPN transistor

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PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
9 June 2017
Product data sheet
1. General description
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)
flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360X
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter
voltage
open base
- - 60 V
IC
ICM
RCEsat
collector current
- - 3A
peak collector current single pulse; tp ≤ 1 ms
- - 6A
collector-emitter
IC = 2 A; IB = 200 mA; Tamb = 25 °C [1] - - 140 mΩ
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02




nexperia

PBSS4360X Datasheet Preview

PBSS4360X Datasheet

NPN transistor

No Preview Available !

Nexperia
PBSS4360X
60 V, 3 A NPN low VCEsat BISS transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 C collector
3 B base
Simplified outline
321
SOT89
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4360X
SOT89
Description
plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5
mm x 2.5 mm x 1.5 mm body
Version
SOT89
7. Marking
Table 4. Marking codes
Type number
PBSS4360X
Marking code
S40
PBSS4360X
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 June 2017
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number PBSS4360X
Description NPN transistor
Maker nexperia
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PBSS4360X Datasheet PDF






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