PBSS4330PAS datasheet, transistor equivalent, nexperia

Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.

Application

up to 175 °C
* Reduced Printed-Circuit Board (PCB) area requirements
* Leadless small SMD plastic package with s.

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP comp.

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