PBSS4330PA transistor equivalent, 3a npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for .
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g. .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP complement: PBSS5330PA.
2. Features and benefits
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