PBSS4260PANS datasheet, transistor equivalent, nexperia

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Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.

Application

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* LED lighting
* P.

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement: PBSS5260PAPS 2. Feature.

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