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PBSS4260PANPS Datasheet Preview

PBSS4260PANPS Datasheet

NPN/PNP Transistor

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PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
4 February 2016
Product data sheet
1. General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless
medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic
package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS
PNP/PNP complement: PBSS5260PAPS
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
Exposed heat sink for excellent thermal and electrical conductivity
High energy efficiency due to less heat generation
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
LED lighting
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor, for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
IC collector current
ICM peak collector current single pulse; tp ≤ 1 ms
Min Typ Max Unit
- - 60 V
- - 2A
- - 3A




nexperia

PBSS4260PANPS Datasheet Preview

PBSS4260PANPS Datasheet

NPN/PNP Transistor

No Preview Available !

Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
Symbol
TR1 (NPN)
RCEsat
TR2 (PNP)
RCEsat
Parameter
Conditions
collector-emitter
saturation resistance
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 200 mΩ
- - 310 mΩ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Simplified outline
654
Graphic symbol
C1 B2 E2
78
TR2
TR1
123
Transparent top view
DFN2020D-6 (SOT1118D)
E1 B1 C2
sym139
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4260PANPS
DFN2020D-6
Description
Version
DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D
small outline package; no leads; 6 terminals; body 2 x 2
x 0.65 mm
7. Marking
Table 4. Marking codes
Type number
PBSS4260PANPS
Marking code
3D
PBSS4260PANPS
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 February 2016
© Nexperia B.V. 2017. All rights reserved
2 / 21


Part Number PBSS4260PANPS
Description NPN/PNP Transistor
Maker nexperia
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