PBSS4260PAN
PBSS4260PAN is 2A NPN/NPN low VCEsat (BISS) transistor manufactured by Nexperia.
description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP plement: PBSS4260PANP. PNP/PNP plement: PBSS5260PAP.
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = 1 A; IB = 100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 2A
- - 3A
- - 165 mΩ
Nexperia
60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2
Simplified outline
Graphic...
