PBRP113ET ret equivalent, pnp ret.
I 800 mA repetitive peak output current
I High current gain hFE I Built-in bias resistors I Simplifies circuit design
I Low collector-emitter saturation voltage VCEsat
I .
I Digital application in automotive and industrial segments
I Medium current peripheral driver
I Switching loads
1.4 Q.
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN113ET.
1.2 Features
I 800 mA repetitive peak output current
I .
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