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PBHV9540Z Datasheet Preview

PBHV9540Z Datasheet

PNP Transistor

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PBHV9540Z
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8140Z.
1.2 Features
„ High voltage
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ AEC-Q101 qualified
„ Medium power SMD plastic package
1.3 Applications
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
VBE = 0 V
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
- - 500 V
- - 400 V
- - 0.5 A
[1] 100 155 -




nexperia

PBHV9540Z Datasheet Preview

PBHV9540Z Datasheet

PNP Transistor

No Preview Available !

NXP Semiconductors
PBHV9540Z
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
base
collector
emitter
collector
Simplified outline Graphic symbol
4 2, 4
123
1
3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBHV9540Z
SC-73
plastic surface-mounted package with increased
heat sink; 4 leads
Version
SOT223
4. Marking
Table 4. Marking codes
Type number
PBHV9540Z
Marking code
V9540Z
PBHV9540Z_1
Product data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
2 of 12


Part Number PBHV9540Z
Description PNP Transistor
Maker nexperia
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