Datasheet4U Logo Datasheet4U.com

PBHV9515QA - PNP Transistor

Datasheet Summary

Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN complement: PBHV8515QA.

2.

Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • Low package height of 0.37 mm.
  • AEC-Q101 qualified.
  • Suitable for Automatic Optical Inspection (AOI) of solder joint 3.

📥 Download Datasheet

Datasheet preview – PBHV9515QA

Datasheet Details

Part number PBHV9515QA
Manufacturer nexperia
File Size 717.72 KB
Description PNP Transistor
Datasheet download datasheet PBHV9515QA Datasheet
Additional preview pages of the PBHV9515QA datasheet.

📁 Similar Datasheet

  • PBHV9560Z - 0.5 A PNP high-voltage low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBHV9040T - 0.25A PNP high-voltage low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBHV9050T - 150mA PNP high-voltage low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBHV9115T - 1 A PNP high-voltage low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBHV9115X - 1 A PNP high-voltage low VCEsat (BISS) transistor (NXP)
  • PBHV9215Z - 2A PNP High-voltage Low VCEsat (BISS) Transistor (NXP Semiconductors)
  • PBHV2160Z - NPN high-voltage low VCEsat (BISS) transistor (NXP)
  • PBHV8115T - 1A NPN high-voltage low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBHV8115Z - 1A NPN high-voltage low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBHV8118T - 1 A NPN high-voltage low VCEsat(BISS) transistor (NXP)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PBHV9515QA 150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBHV8515QA. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • Low package height of 0.37 mm • AEC-Q101 qualified • Suitable for Automatic Optical Inspection (AOI) of solder joint 3.
Published: |