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PBHV9414Z Datasheet Preview

PBHV9414Z Datasheet

PNP Transistor

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PBHV9414Z
140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor
24 January 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -140 V
- - -4 A
- - -10 A
- 100 150 mΩ




nexperia

PBHV9414Z Datasheet Preview

PBHV9414Z Datasheet

PNP Transistor

No Preview Available !

Nexperia
PBHV9414Z
140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 C collector
3 E emitter
4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3
sym028
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV9414Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PBHV9414Z
Marking code
V9414Z
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj junction temperature
PBHV9414Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 January 2014
Min Max Unit
- -180 V
- -140 V
- -7 V
- -4 A
- -10 A
- -500 mA
[1] -
0.65 W
[2] -
1W
[3] -
1.35 W
- 150 °C
© Nexperia B.V. 2017. All rights reserved
2 / 14


Part Number PBHV9414Z
Description PNP Transistor
Maker nexperia
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