Datasheet4U Logo Datasheet4U.com

NX7002BKXB - dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NX7002BKXB dual N-channel Trench MOSFET NXP
NX7002BK N-channel Trench MOSFET NXP
NX7002BKM N-channel Trench MOSFET NXP
NX7002BKMB N-channel Trench MOSFET NXP
NX7002BKS dual N-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
NX7002BK N-channel MOSFET
NX7002BKH N-channel MOSFET
NX7002BKM N-channel MOSFET
NX7002BKMB N-channel MOSFET
NX7002BKS Dual N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.