NX138BKS - dual N-channel MOSFET

Nexperia

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Low threshold voltage.
Very fast switching.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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NX138BKS dual n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	NX138BKS
Manufacturer	Nexperia
File Size	754.61 KB
Description	dual N-channel MOSFET
Datasheet	NX138BKS Datasheet

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Other Datasheets by Nexperia

Part Number	Description
NX138BK	N-channel MOSFET
NX138BKH	N-channel Trench MOSFET
NX138BKW	N-channel MOSFET
NX138AK	N-channel MOSFET
NX138AKS	Dual N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NX138BKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.