GANE3R9-150QBA datasheet, fet equivalent, nexperia

Features and benefits

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application

* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Very-Thin-Profile Quad Flat No-L.

Description

The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. .

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