GANE3R9-150QBA
GANE3R9-150QBA is Gallium Nitride (GaN) FET manufactured by Nexperia.
VQFN7
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
30 April 2024
Product data sheet
1. General description
The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- RoHS, Pb-free, REACH-pliant
- High...
