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GANE3R9-150QBA - Gallium Nitride (GaN) FET

General Description

The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package.

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

2.

Key Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VQFN7 GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 30 April 2024 Product data sheet 1. General description The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm 3.