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GANE3R9-150QBA Datasheet, nexperia

GANE3R9-150QBA fet equivalent, gallium nitride (gan) fet.

GANE3R9-150QBA Avg. rating / M : 1.0 rating-13

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GANE3R9-150QBA Datasheet

Features and benefits


* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application


* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Very-Thin-Profile Quad Flat No-L.

Description

The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. .

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TAGS

GANE3R9-150QBA
Gallium
Nitride
GaN
FET
nexperia

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