GANE3R9-150QBA
Description
The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Key Features
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- RoHS, Pb-free, REACH-compliant
- High efficiency and high power density
- Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
