GANB4R8-040CBA
description
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (Ga N) High Electron Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Bi-directional device
- Ultra high switching speed capability
- Ultra-low on-state resistance
- Ro HS, Pb-free, REACH-pliant
- High efficiency and high power density
- Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm
3. Applications
- High-side load switch
- OVP protection in smart phone USB port
- Power switch circuits
- Stand-by power system
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDD drain-drain voltage
-40 °C ≤ Tj ≤ 125 °C
[1]
- -
ID drain current
VGD = 5 V; Tmb = 25 °C
[2] [3]
- -
Ptot total power dissipation Tmb = 25 °C; see Fig. 1
- -
Tj junction temperature
-40
-...
