GANB4R8-040CBA fet equivalent, gallium nitride (gan) fet.
* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS,.
* High-side load switch
* OVP protection in smart phone USB port
* Power switch circuits
* Stand-by powe.
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance.
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