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GANB4R8-040CBA - Gallium Nitride (GaN) FET

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nexperia

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GANB4R8-040CBA Gallium Nitride (GaN) FET by nexperia - Datasheet Preview — Datasheet preview – GANB4R8-040CBA

Datasheet Details

Part number	GANB4R8-040CBA
Manufacturer	nexperia
File Size	1.22 MB
Description	Gallium Nitride (GaN) FET
Datasheet	GANB4R8-040CBA Datasheet
Additional preview pages of the GANB4R8-040CBA datasheet.

Product details

Description

The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

Features

Enhancement mode - normally-off power switch.
Bi-directional device.
Ultra high switching speed capability.
Ultra-low on-state resistance.
RoHS, Pb-free, REACH-compliant.
High efficiency and high power density.
Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm 3.

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Published: Jul 10, 2024 |