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GANB4R8-040CBA Datasheet, nexperia

GANB4R8-040CBA fet equivalent, gallium nitride (gan) fet.

GANB4R8-040CBA Avg. rating / M : 1.0 rating-13

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GANB4R8-040CBA Datasheet

Features and benefits


* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS,.

Application


* High-side load switch
* OVP protection in smart phone USB port
* Power switch circuits
* Stand-by powe.

Description

The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance. 2. Features and benefits .

Image gallery

GANB4R8-040CBA Page 1 GANB4R8-040CBA Page 2 GANB4R8-040CBA Page 3

TAGS

GANB4R8-040CBA
Gallium
Nitride
GaN
FET
GAN039-650NBB
GAN039-650NBBA
GAN039-650NTB
nexperia

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