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BUK9Y30-75B Datasheet Preview

BUK9Y30-75B Datasheet

N-channel MOSFET

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BUK9Y30-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 10 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj 25 °C; Tj 175 °C
VGS = 5 V; Tmb = 25 °C;
see Figure 1 and 4
Tmb = 25 °C; see Figure 2
ID = 34 A; Vsup 75 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
VGS = 5 V; ID = 25 A;
VDS = 60 V; Tj = 25 °C;
see Figure 14
VGS = 5 V; ID = 15 A;
Tj = 25 °C; see Figure 12 and
13
Min Typ Max Unit
- - 75 V
- - 34 A
- - 85 W
- - 78 mJ
- 9 - nC
- 25 30 mΩ




nexperia

BUK9Y30-75B Datasheet Preview

BUK9Y30-75B Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK9Y30-75B
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning
Symbol
S
S
S
G
D
Description
source
source
source
gate
mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
BUK9Y30-75B
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
4. Limiting values
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
VDGR
drain-source voltage
drain-gate voltage
Tj 25 °C; Tj 175 °C
RGS = 20 kΩ; Tmb 25 °C; Tmb 175 °C
-
-
VGS gate-source voltage
ID drain current
Tmb = 25 °C; VGS = 5 V; see Figure 1 and 4
Tmb = 100 °C; VGS = 5 V; see Figure 1
IDM peak drain current
Tmb = 25 °C; tp 10 μs; pulsed; see Figure 4
Ptot total power dissipation Tmb = 25 °C; see Figure 2
-15
-
-
-
-
Tstg storage temperature
-55
Tj junction temperature
-55
Source-drain diode
IS source current
ISM peak source current
Tmb = 25 °C
tp 10 μs; pulsed; Tmb = 25 °C
-
-
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID = 34 A; Vsup 75 V; RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
-
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3
[1][2] -
[3]
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
BUK9Y30-75B_4
Product data sheet
Rev. 04 — 10 April 2008
Max Unit
75 V
75 V
15 V
34 A
24 A
137 A
85 W
175 °C
175 °C
34 A
137 A
78 mJ
-J
© Nexperia B.V. 2017. All rights reserved
2 of 13


Part Number BUK9Y30-75B
Description N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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