Datasheet4U Logo Datasheet4U.com

BUK9Y12-100E - N-channel MOSFET

General Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

Key Features

  • Q101 compliant.
  • Repetitive avalanche rated.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9Y12-100E N-channel 100V 12m ohm logic level MOSFET NXP Semiconductors
BUK9Y12-40E N-Channel MOSFET NXP Semiconductors
BUK9Y12-55B N-channel TrenchMOS logic level FET NXP Semiconductors
BUK9Y104-100B N-channel TrenchMOS logic level FET NXP Semiconductors
BUK9Y107-80E MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
BUK9Y12-40E N-channel MOSFET
BUK9Y12-55B N-channel MOSFET
BUK9Y104-100B N-channel MOSFET
BUK9Y107-80E N-channel MOSFET
BUK9Y11-30B N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1.