BUK9Y11-30B Datasheet | Nexperia

description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) Trench MOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 pliant I Logic level patible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 m J I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1. Pinning Pin Description 1, 2, 3 source (S) 4 gate (G) mb mounting base; connected to drain (D) Simplified outline mb Symbol SOT669 (LFPAK) mbl798 S1 S2 S3 Nexperia N-channel Trench MOS logic level FET 3. Ordering information Table 2. Ordering information Type number Package Name LFPAK 4. Limiting values Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage drain-gate voltage (DC) gate-source voltage drain current IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode RGS = 20 kΩ Tmb = 25 °C; VGS = 5 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 IDR reverse drain current IDRM peak reverse drain current Avalanche...