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BUK9M12-60E Datasheet

N-channel MOSFET

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BUK9M12-60E
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
19 September 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 54 A
- - 79 W
- 10 12 mΩ
- 7.9 - nC




nexperia

BUK9M12-60E Datasheet Preview

BUK9M12-60E Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK9M12-60E
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S Source
2 S Source
3 S Source
4 G Gate
mb D
Mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9M12-60E
LFPAK33
Description
Plastic single ended surface mounted package
(LFPAK33); 8 leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
BUK9M12-60E
Marking code
91260E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
DC; Tj ≤ 175 °C
Pulsed; Tj ≤ 175 °C
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
VGS = 5 V; Tmb = 100 °C; Fig. 2
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1][2]
Min
-
-
-10
-15
-
-
-
-
Max
60
60
10
15
79
54
38
216
Unit
V
V
V
V
W
A
A
A
BUK9M12-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2016
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number BUK9M12-60E
Description N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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