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BUK9K29-100E Datasheet Preview

BUK9K29-100E Datasheet

Dual N-channel MOSFET

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BUK9K29-100E
Dual N-channel TrenchMOS logic level FET
28 March 2013
Product data sheet
1. General description
Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) > 0.5 V @ 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12
resistance
Dynamic characteristics FET1 and FET2
QG(tot)
QGD
total gate charge
gate-drain charge
ID = 10 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 30 A
- - 68 W
-55 -
175 °C
-
25.1 29
- 54 - nC
- 10.9 - nC




nexperia

BUK9K29-100E Datasheet Preview

BUK9K29-100E Datasheet

Dual N-channel MOSFET

No Preview Available !

Nexperia
BUK9K29-100E
Dual N-channel TrenchMOS logic level FET
Symbol
Parameter
Conditions
Avalanche Ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 30 A; Vsup ≤ 100 V; VGS = 5 V;
Tj(init) = 25 °C; Fig. 3
Min Typ
[1][2] -
-
[1] Refer to application note AN10273 for further information
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
Max Unit
83 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 S1 source1
2 G1 gate1
3 S2 source2
4 G2 gate2
5 D2 drain2
6 D2 drain2
7 D1 drain1
8 D1 drain1
Simplified outline
8765
Graphic symbol
D1 D1
D2 D2
1234
LFPAK56D (SOT1205)
S1 G1 S2 G2
mbk725
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9K29-100E
LFPAK56D
Description
Plastic single ended surface mounted package (LFPAK56D); 8
leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
BUK9K29-100E
Marking code
9291E
BUK9K29-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 March 2013
© Nexperia B.V. 2017. All rights reserved
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Part Number BUK9K29-100E
Description Dual N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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