BUK9K29-100E
BUK9K29-100E is Dual N-channel MOSFET manufactured by Nexperia.
description
Dual logic level N-channel MOSFET in a LFPAK56D package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
- Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) > 0.5 V @ 175 °C
3. Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 resistance
Dynamic characteristics FET1 and FET2
QG(tot) QGD total gate charge gate-drain charge
ID = 10 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 30 A
- - 68 W
-55
- 175 °C
- 25.1 29 mΩ
- 54
- n C
- 10.9
- n...
