Datasheet Summary
N-channel TrenchMOS logic level FET
18 August 2015
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
3. Applications
- Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 100 V
ID drain...
