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BUK9675-100A - N-channel MOSFET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

2.

Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance 3.

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Full PDF Text Transcription (Reference)

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BUK9675-100A N-channel TrenchMOS logic level FET 18 August 2015 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC Q101 compliant • Low conduction losses due to low on-state resistance 3. Applications • Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 23 A Ptot total power dissipation Tmb = 25 °C; Fig.
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