Datasheet4U Logo Datasheet4U.com

BUK9612-55B - N-channel MOSFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9612-55B logic level FET NXP
BUK9610-100B TrenchMOS logic level FET NXP
BUK9610-100B N-Channel 100V MOSFET VBsemi
BUK9610-30 TrenchMOS transistor Logic level FET NXP
BUK9610-55A N-Channel MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
BUK9610-100B N-channel MOSFET
BUK9611-80E N-channel MOSFET
BUK9614-60E N-channel MOSFET
BUK9615-100A N-channel TrenchMOS standard level FET
BUK9615-100E N-channel TrenchMOS standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK9612-55B N-channel TrenchMOS logic level FET Rev. 02 — 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.