900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






nexperia

BUK9610-100B Datasheet Preview

BUK9610-100B Datasheet

N-channel MOSFET

No Preview Available !

BUK9610-100B
N-channel TrenchMOS logic level FET
Rev. 03 — 31 January 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source Tj 25 °C; Tj 175 °C
voltage
- - 100 V
ID
drain current
VGS = 5 V; Tmb = 25 °C;
[1] - - 75 A
see Figure 1; see Figure 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 300 W
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
-
8.3 9.7 m
8.6 10 m




nexperia

BUK9610-100B Datasheet Preview

BUK9610-100B Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK9610-100B
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 100 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
VGS = 5 V; ID = 25 A;
VDS = 80 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- - 629 mJ
- 32 - nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9610-100B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK9610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 January 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14


Part Number BUK9610-100B
Description N-channel MOSFET
Maker nexperia
Total Page 14 Pages
PDF Download

BUK9610-100B Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BUK9610-100B TrenchMOS logic level FET
NXP
2 BUK9610-100B N-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy