900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






nexperia

BUK7Y13-40B Datasheet Preview

BUK7Y13-40B Datasheet

N-channel MOSFET

No Preview Available !

BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
1.2 Features and benefits
„ 175 °C rated
„ Suitable for standard level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive ABS systems
„ Fuel pump and injection
„ Air bag
„ Automotive transmission control
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 4
Tmb = 25 °C; see Figure 2
ID = 10 A; VDS = 32 V;
VGS = 10 V; see Figure 14
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13 and
12
ID = 58 A; Vsup 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 40 V
- - 58 A
- - 85 W
- 5 - nC
- 11 13 mΩ
- - 85 mJ




nexperia

BUK7Y13-40B Datasheet Preview

BUK7Y13-40B Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK7Y13-40B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1, 2, 3
4
mb
Pinning
Symbol
S
G
D
Description
source
gate
mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
BUK7Y13-40B
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
4. Limiting values
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Avalanche ruggedness
Tj 25 °C; Tj 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4
Tmb = 175 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp 10 μs; pulsed; see Figure 4
Tmb = 25 °C; see Figure 2
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID = 58 A; Vsup 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3
Source-drain diode
IS source current
ISM peak source current
Tmb = 25 °C
tp 10 μs; pulsed; Tmb = 25 °C
Min
-
-
20
-
-
-
-
-55
-55
-
[1][2] -
[3]
-
-
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
BUK7Y13-40B_3
Product data sheet
Rev. 03 — 26 May 2008
Max Unit
40 V
40 V
20 V
58 A
41 A
234 A
85 W
175 °C
175 °C
85 mJ
-J
58 A
234 A
© Nexperia B.V. 2017. All rights reserved
2 of 12


Part Number BUK7Y13-40B
Description N-channel MOSFET
Maker nexperia
Total Page 12 Pages
PDF Download

BUK7Y13-40B Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BUK7Y13-40B N-Channel MOSFET
NXP Semiconductors
2 BUK7Y13-40B N-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy