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BUK7Y113-100E Datasheet Preview

BUK7Y113-100E Datasheet

N-channel MOSFET

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BUK7Y113-100E
N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 5 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 12 A
- - 45 W
- 80 113 mΩ
- 4.2 - nC




nexperia

BUK7Y113-100E Datasheet Preview

BUK7Y113-100E Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK7Y113-100E
N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7Y113-100E
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK7Y113-100E
Marking code
711310E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
BUK7Y113-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 12 A
- 8.5 A
- 48 A
- 45 W
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number BUK7Y113-100E
Description N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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