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BUK7S0R7-40H Datasheet Preview

BUK7S0R7-40H Datasheet

N-channel MOSFET

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BUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
2 May 2019
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and
qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
Fully automotive qualified to beyond AEC-Q101:
-55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:
Designed for smaller footprint and improved power density over older wire bond packages
such as D²PAK for today’s space constrained high power automotive applications
Thin package and copper clip enables LFPAK88 to be highly efficient thermally
LFPAK copper clip technology enabling improvements over wire bond packages by:
Increased maximum current capability and excellent current spreading
Improved RDSon
Low source inductance
Low thermal resistance Rth
LFPAK Gull Wing leads:
Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal
cycling stress, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:
Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
3. Applications
12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
LED lighting
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 40 V
[1] - - 425 A
- - 375 W




nexperia

BUK7S0R7-40H Datasheet Preview

BUK7S0R7-40H Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
Symbol
Parameter
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Source-drain diode
Qr recovered charge
Conditions
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]
VDS = 20 V
Min Typ Max Unit
-55 -
175 °C
0.43 0.62 0.7 mΩ
- 25 50 nC
- 74 - nC
[1] 425A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
[2] includes capacitive recovery
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
2 S source
3 S source
4 S source
mb D
mounting base; connected to
drain
1 234
LFPAK88 (SOT1235)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7S0R7-40H
LFPAK88
Description
plastic, single-ended surface-mounted package (LFPAK88); 4
leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body
Version
SOT1235
7. Marking
Table 4. Marking codes
Type number
BUK7S0R7-40H
Marking code
7S0R740H
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
Min Max Unit
- 40 V
BUK7S0R7-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 May 2019
© Nexperia B.V. 2019. All rights reserved
2 / 13


Part Number BUK7S0R7-40H
Description N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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