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BUK7K5R6-30E - dual N-channel MOSFET

General Description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

Key Features

  • Dual MOSFET.
  • Q101 compliant.
  • Repetitive avalanche rated.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • True standard level gate with VGS(th) of greater than 1 V at 175 °C 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK7K5R6-30E Dual N-channel 30 V, 5.6 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1.