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BUK6Y61-60P - P-channel MOSFET

Datasheet Summary

Description

P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse battery protection.

2.

Features

  • High thermal power dissipation capability.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • Trench MOSFET technology.
  • AEC-Q101 qualified 3.

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Datasheet preview – BUK6Y61-60P

Datasheet Details

Part number BUK6Y61-60P
Manufacturer nexperia
File Size 247.55 KB
Description P-channel MOSFET
Datasheet download datasheet BUK6Y61-60P Datasheet
Additional preview pages of the BUK6Y61-60P datasheet.

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Full PDF Text Transcription

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BUK6Y61-60P 60 V, P-channel Trench MOSFET 16 March 2020 Product data sheet 1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse battery protection. 2. Features and benefits • High thermal power dissipation capability • Suitable for thermally demanding environments due to 175 °C rating • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Reverse battery protection • Power management • High-side loadswitch • Motor drive 4. Quick reference data Table 1.
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