BSS84AKMB
description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 1 k V
- Ultra thin package profile with 0.37 mm height
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon drain-source on-state VGS = -10 V; ID = -100 m A; Tj = 25 °C resistance
Min Typ Max
- -
-50
-20
- 20
- -
-230
- 4.5 7.5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Unit V V m A
Ω
Nexperia
5. Pinning...
