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BSS84AKMB
50 V, single P-channel Trench MOSFET
27 October 2020
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 1 kV • Ultra thin package profile with 0.37 mm height
3. Applications
• Relay driver • High-speed line driver • High-side load switch • Switching circuits
4. Quick reference data
Table 1.
BSS84AKMB Datasheet
