* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection: 2 kV HBM 3. Applications
* Rela.

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference d.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Logic-level compatible
* Very fast switching
* T.

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