BSH205G2 - P-channel Trench MOSFET

Nexperia

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low threshold voltage.
Low on-state resistance.
Trench MOSFET technology.
Enhanced power dissipation capability of 890 mW.
AEC-Q101 qualified 3.

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BSH205G2 p-channel trench mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	BSH205G2
Manufacturer	Nexperia
File Size	730.07 KB
Description	P-channel Trench MOSFET
Datasheet	BSH205G2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 890 mW • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.