* Low threshold voltage
* Low on-state resistance
* Trench MOSFET technology
* Enhanced power dissipation capability of 890 mW
* AEC-Q101 qualified 3.

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Low on-state resistance
.

BSH205

BSH201

BSH202

BSH203

BSH206

BSH207

BSH299

BSH101

BSH102

BSH103

BSH104

BSH105

BSH106

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts