* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 3 kV HBM 3. Applications
* Rela.

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference d.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Very fast switching
* Tr.

BSH111

BSH112

BSH114

BSH101

BSH102

BSH103

BSH104

BSH105

BSH106

BSH107

BSH108

BSH121

BSH201

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