BAV170M diode equivalent, dual common cathode low-leakage diode.
* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance Cd = 2 pF
* Ultr.
* Low-leakage current applications
* General-purpose switching
4. Quick reference data
Table 1. Quick referenc.
Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
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