* High switching speed: trr ≤ 50 ns
* Low leakage current: IR ≤ 100 nA
* High reverse voltage: VR ≤ 200 V
* Low capacitance: Cd ≤ 2 pF
* Ultra small a.

* High-speed switching
* General-purpose switching
* Voltage clamping
* Reverse polarity protection 4. .

High-voltage switching diode, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. 2. Features and benefits
* High switching speed: trr ≤ 50 ns
* Low .

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